FinFET structure and method of manufacturing the same

ABSTRACT

The present disclosure relates to a FinFET structure and a method of manufacturing the same. The FinFET structure includes a first fin and a second fin. The first fin is over a first base and has a first channel region. The first channel region has a first channel length. The second fin is over a second base and has a second channel region. The second channel region has a second channel length. The second channel length is different from the first channel length.

PRIORITY CLAIM AND CROSS REFERENCE

This application claims the priority benefit of U.S. provisionalapplication Ser. No. 62/785,418, filed on Dec. 27, 2018. The entirety ofthe above-mentioned patent application is hereby incorporated byreference herein and made a part of this specification.

TECHNICAL FIELD

The present disclosure relates to a FinFET structure and a method ofmanufacturing the same, and more particularly, to a FinFET structurehaving different channel lengths and a method of manufacturing the same.

DISCUSSION OF THE BACKGROUND

Semiconductor devices are essential for many modern applications. Withthe advancement of electronic technology, semiconductor devices aresteadily becoming smaller while providing greater functionality andincluding greater amounts of integrated circuits. Due to theminiaturized scale of semiconductor devices, fin structures are widelyused in field-effect transistors.

A conventional FinFET structure is provided. The FinFET structureincludes a semiconductor substrate and a plurality of fins extendingaway from the semiconductor substrate. However, each of the fins has thesame channel length, and the current running along sidewalls and tops ofthe fins cannot be different.

This Discussion of the Background section is provided for backgroundinformation only. The statements in this Discussion of the Backgroundare not an admission that the subject matter disclosed in thisDiscussion of the Background section constitute prior art to the presentdisclosure, and no part of this Discussion of the Background section maybe used as an admission that any part of this application, includingthis Discussion of the Background section, constitutes prior art to thepresent disclosure.

SUMMARY

One aspect of the present disclosure provides a FinFET structure. TheFinFET structure includes a first fin over a first base, the first finhaving a first channel region, wherein the first channel region has afirst channel length; and a second fin over a second base, the secondfin having a second channel region, wherein the second channel regionhas a second channel length, and the second channel length is differentfrom the first channel length.

In some embodiments, the FinFET structure further includes asemiconductor substrate, wherein the semiconductor substrate includesthe first base and the second base.

In some embodiments, the first fin extends along a first direction, thefirst channel length is measured along a second direction perpendicularto the first direction, the second fin extends along the firstdirection, and the second channel region has the second channel lengthmeasured along the second direction.

In some embodiments, the first fin includes a first bottom portionembedded in a first isolation layer over the first base and a first topportion over the first bottom portion, the second fin includes a secondbottom portion embedded in a second isolation layer over the second baseand a second top portion over the second bottom portion, the first topportion includes the first channel region, and the second top portionincludes the second channel region.

In some embodiments, the first top portion has a first drain region, afirst source region and the first channel region between the first drainregion and the first source region, and the first drain region, thefirst channel region and the first source region are arranged along thesecond direction.

In some embodiments, the first channel region of the first top portionhas a first channel width measured along a third direction perpendicularto the second direction and the first direction; the first drain regionand the first source region of the first fin have a first top width; andthe first channel width is different from the first top width.

In some embodiments, the first channel width is smaller than the firsttop width.

In some embodiments, the first bottom portion has a first bottom widthextending in the third direction, and the first channel width is smallerthan the first bottom width.

In some embodiments, the first fin and the second fin are formedmonolithically with the semiconductor substrate.

In some embodiments, the FinFET structure further includes a first gatecovering the first channel region and a second gate covering the secondchannel region.

Another aspect of the present disclosure provides a method ofmanufacturing a FinFET structure. The method includes forming a firstfin over a semiconductor substrate, wherein the first fin includes afirst bottom portion embedded in a first isolation layer over thesemiconductor substrate and a first top portion over the first bottomportion; forming a blocking layer, wherein the blocking layer includestwo blocking dams on the first top portion, wherein at least one of theblocking dams has a first dam width measured along a second direction;trimming the blocking dam so that a width of the blocking dam is reducedfrom the first dam width to a second dam width smaller than the firstdam width, wherein a portion of the first top portion between the twoblocking dams is defined as a first channel region, and the firstchannel region has a first channel length measured along the seconddirection.

In some embodiments, the method further includes forming a dummy gatecovering a portion of the first top portion before forming a blockinglayer, wherein the dummy gate is between the two blocking dams after theforming of the blocking layer; and removing the dummy gate, wherein thetwo blocking dams and the portion of the first top portion are exposed.

In some embodiments, the blocking layer further includes a blocking capon a top of the dummy gate, wherein the blocking cap is removed duringthe removing of the dummy gate.

In some embodiments, the method further includes forming a dielectriclayer covering the first fin and the first isolation layer beforeremoving the blocking cap and the dummy gate.

In some embodiments, the method further includes forming a mask layercovering the dielectric layer, wherein the mask layer has an aperturecorresponding to the dummy gate, before removing the blocking cap andthe dummy gate.

In some embodiments, the two blocking dams are spaced apart from eachother and the two blocking dams are arranged along the second direction.

In some embodiments, the first channel region has a first top widthmeasured along a third direction perpendicular to the second direction.

In some embodiments, the method further includes a step of forming atleast one semiconductor component on the semiconductor substrate.

In some embodiments, the first fin extends vertically from thesemiconductor substrate along a first direction perpendicular to thethird direction and the second direction.

In some embodiments, the method further includes trimming the firstchannel region to reduce a width of the first channel region from thefirst top width to a first channel width smaller than the first topwidth.

In some embodiments, the method further includes forming a first drainregion and a first source region adjacent to the first channel region,wherein the first drain region, the first channel region and the firstsource region are arranged along the second direction, and each of thefirst drain region and the first source region of the first fin has afirst top width measured along the third direction, wherein the firsttop width is larger than the first channel width.

With the above-mentioned configurations of the FinFET structure, thechannel length of the fin can be adjusted.

The foregoing has outlined rather broadly the features and technicaladvantages of the present disclosure in order that the detaileddescription of the disclosure that follows may be better understood.Additional features and technical advantages of the disclosure aredescribed hereinafter and form the subject of the claims of thedisclosure. It should be appreciated by those skilled in the art thatthe concepts and specific embodiments disclosed may be utilized as abasis for modifying or designing other structures, or processes, forcarrying out the purposes of the present disclosure. It should also berealized by those skilled in the art that such equivalent constructionsdo not depart from the spirit or scope of the disclosure as set forth inthe appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete understanding of the present disclosure may be derivedby referring to the detailed description and claims. The disclosureshould also be understood to be coupled to the figures' referencenumbers, which refer to similar elements throughout the description.

FIG. 1 is a top view of a FinFET structure in accordance with someembodiments of the present disclosure.

FIG. 2 is a partial perspective view of a first fin of the FinFETstructure in accordance with some embodiments of the present disclosure.

FIG. 3 is a partial perspective view of a second fin of the FinFETstructure in accordance with some embodiments of the present disclosure.

FIG. 4 is a cross-sectional view of the first channel region of thefirst fin in FIG. 1 in accordance with some embodiments of the presentdisclosure.

FIG. 5 is a cross-sectional view of the second channel region of thesecond fin in FIG. 1 in accordance with some embodiments of the presentdisclosure.

FIG. 6 is a flow diagram illustrating a method of manufacturing a FinFETstructure in accordance with some embodiments of the present disclosure.

FIGS. 7 to 13 are schematic views of intermediate stages in the processof manufacturing a FinFET structure in accordance with some embodimentsof the present disclosure.

DETAILED DESCRIPTION

Embodiments, or examples, of the disclosure illustrated in the drawingsare now described using specific language. It shall be understood thatno limitation of the scope of the disclosure is hereby intended. Anyalteration or modification of the described embodiments, and any furtherapplications of principles described in this document, are to beconsidered as normally occurring to one of ordinary skill in the art towhich the disclosure relates. Reference numerals may be repeatedthroughout the embodiments, but this does not necessarily mean thatfeature(s) of one embodiment apply to another embodiment, even if theyshare the same reference numeral.

It shall be understood that, although the terms first, second, third,etc. may be used herein to describe various elements, components,regions, layers or sections, these elements, components, regions, layersor sections are not limited by these terms. Rather, these terms aremerely used to distinguish one element, component, region, layer orsection from another element, component, region, layer or section. Thus,a first element, component, region, layer or section discussed belowcould be termed a second element, component, region, layer or sectionwithout departing from the teachings of the present inventive concept.

The terminology used herein is for the purpose of describing particularexample embodiments only and is not intended to be limited to thepresent inventive concept. As used herein, the singular forms “a,” “an”and “the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise. It shall be further understood thatthe terms “comprise” and “comprising,” when used in this specification,point out the presence of stated features, integers, steps, operations,elements, or components, but do not preclude the presence or addition ofone or more other features, integers, steps, operations, elements,components, or groups thereof.

To clearly explain embodiments below, some embodiments are described onbasis of z-axis direction (first direction), y-axis direction (seconddirection) and x-axis direction (third direction), and those directionsare substantially perpendicular to one another.

FIG. 1 is a top view of a FinFET structure 10 in accordance with someembodiments of the present disclosure, FIG. 2 is a partial perspectiveview of a first fin 100 of the FinFET structure 10 in accordance withsome embodiments of the present disclosure, and FIG. 3 is a partialperspective view of a second fin 200 of the FinFET structure 10 inaccordance with some embodiments of the present disclosure.

Referring to FIG. 2, in some embodiments, the FinFET structure 10includes a semiconductor substrate 300 having a first base 301, and thefirst fin 100 is disposed over the first base 301. In some embodiments,the first fin 100 is formed monolithically with the semiconductorsubstrate 300 and protrudes from the semiconductor substrate 300 in thez-axis direction. In some embodiments, the first fin 100 is formed byetching the semiconductor substrate 300 or through an epitaxial growthprocess. In some embodiments, the first fin 100 is grown from silicon,polycrystalline silicon, or single-crystal silicon.

Referring to FIG. 2, the first fin 100 has a first channel region 102,which is covered by a first gate (not shown in FIG. 2). In someembodiments, the first fin 100 includes a first bottom portion 106 and afirst top portion 108, the first bottom portion 106 is embedded in afirst isolation layer 112 over the first base 301, and the first topportion 108 is disposed over the first bottom portion 106. In someembodiments, the first top portion 108 includes the first channel region102. In some embodiments, the first isolation layer 112 may be depositedon trenches adjacent to the first fin 100 through chemical vapordeposition (CVD), spin-on deposition (SOD), or the like.

Referring to FIG. 2, the first top portion 108 has a first drain region109, a first source region 110 and the first channel region 102 betweenthe first drain region 109 and the first source region 110. In someembodiments, the first drain region 109, the first channel region 102and the first source region 110 are arranged along the y-axis direction.

Referring to FIG. 3, in some embodiments, the semiconductor substrate300 has a second base 302, and the second fin 200 is over the secondbase 302. In some embodiments, the second fin 200 is formedmonolithically with the semiconductor substrate 300 and protrudes fromthe semiconductor substrate 300 in the z-axis direction. In someembodiments, the second fin 200 is formed by etching the semiconductorsubstrate 300 or through an epitaxial growth process. In someembodiments, the second fin 200 is grown from silicon, polycrystallinesilicon, or single-crystal silicon.

Referring to FIG. 3, the second fin 200 has a second channel region 202,which is covered by a second gate (not shown in FIG. 3). In someembodiments, the second fin 200 includes a second bottom portion 206 anda second top portion 208, the second bottom portion 206 is embedded in asecond isolation layer 212 over the second base 302, and the second topportion 208 is disposed over the second bottom portion 206. In someembodiments, the second top portion 208 includes the second channelregion 202. In some embodiments, the second isolation layer 212 may bedeposited on trenches adjacent to the second fin 200 through chemicalvapor deposition (CVD), spin-on deposition (SOD), or the like.

Referring to FIG. 3, in some embodiments, the second top portion 208 hasa second drain region 209, a second source region 210 and the secondchannel region 202 between the second drain region 209 and the secondsource region 210. In some embodiments, the second drain region 209, thesecond channel region 202 and the second source region 210 are arrangedalong the y-axis direction.

Referring back to FIG. 1, in some embodiments, the first channel region102 has a first channel length 103, which is measured along the y-axisdirection. In some embodiments, the second channel region 202 has asecond channel length 203, which is measured along the y-axis direction.In some embodiments, the second channel length 203 is different from thefirst channel length 103. In some embodiments, the second channel length203 is smaller than the first channel length 103.

FIG. 4 is a cross-sectional view of the first channel region 102 of thefirst fin 100 in FIG. 1 in accordance with some embodiments of thepresent disclosure. Referring to FIG. 4, in some embodiments, the firstchannel region 102 of the first fin 100 has a first channel width 104measured along the x-axis direction. In some embodiments, the firstbottom portion 106 has a first bottom width 107 along the x-axisdirection, and the first channel width 104 is smaller than the firstbottom width 107.

Referring to FIG. 2 and FIG. 4, in some embodiments, the first drainregion 109 and the first source region 110 of the first fin 100 have afirst top width 111 in FIG. 2, and the first channel width 104 in FIG. 4is different from the first top width 111. In some embodiments, thefirst channel width 104 is smaller than the first top width 111.

FIG. 5 is a cross-sectional view of the second channel region 202 of thesecond fin 200 in FIG. 1 in accordance with some embodiments of thepresent disclosure. Referring to FIG. 5, in some embodiments, the secondchannel region 202 of the second fin 200 has a second channel width 204measured along the x-axis direction. In some embodiments, the secondbottom portion 206 has a second bottom width 207 along the x-axisdirection, and the second channel width 204 is the same as the secondbottom width 207.

Referring to FIG. 3 and FIG. 5, in some embodiments, the second drainregion 209 and the second source region 210 of the second fin 200 have asecond top width 211, and the second channel width 204 is the same asthe second top width 211.

FIG. 6 is a flow diagram illustrating a method 400 of manufacturing aFinFET structure in accordance with some embodiments of the presentdisclosure. FIGS. 7 to 13 are schematic views of intermediate stages inthe process of manufacturing a FinFET structure in accordance with someembodiments of the present disclosure. In some embodiments, the method400 includes a number of operations (402, 404, 406, 408, 410, 412 and414), and the description and illustration below are not deemed as alimitation to the sequence of the operations.

As shown in FIGS. 7 and 8, in some embodiments, according to theoperation 402, the first fin 100 is formed over a semiconductorsubstrate 300. The first fin 100 includes a first bottom portion 106embedded in a first isolation layer 112 over the semiconductor substrate300 and a first top portion 108 over the first bottom portion 106. Insome embodiments, the first fin 100 extends vertically from thesemiconductor substrate 300 in the z-axis direction.

In some embodiments, the first fin 100 is formed by etching thesemiconductor substrate 300 or through an epitaxial growth process. Insome embodiments, the first fin 100 is grown from silicon,polycrystalline silicon, or single-crystal silicon. In some embodiments,the first isolation layer 112 may be deposited on trenches adjacent tothe first fin 100 through chemical vapor deposition (CVD), spin-ondeposition (SOD), or the like.

As shown in FIGS. 7 and 8, in some embodiments, according to theoperation 404, a dummy gate 302 is formed. In some embodiments, aportion of the first top portion 108 is covered by the dummy gate 302.In some embodiments, the dummy gate 302 may include polysilicon, oxidematerial or the like.

As shown in FIGS. 7 and 8, in some embodiments, according to theoperation 406, a blocking layer 114 is formed on the dummy gate 302. Insome embodiments, the blocking layer 114 includes a blocking cap 115 ona top of the dummy gate 302 and two blocking dams 116 on the first topportion 108 of the first fin 100. In some embodiments, the two blockingdams 116 are spaced apart from each other and the two blocking dams 116are arranged along the y-axis direction. In some embodiments, the dummygate 302 is between the two blocking dams 116. In some embodiments, atleast one of the blocking dams 116 has a first dam width 117 (shown inFIG. 10) measured along the y-axis direction. In some embodiments, theblocking layer 114 can be deposited and etched to form a shape as shownin FIGS. 7 and 8.

In some embodiments, as shown in FIGS. 7 and 8, according to theoperation 408, a dielectric layer 304 is formed. In some embodiments,the dielectric layer 304 covers the first fin 100 and the firstisolation layer 112. In some embodiments, the dielectric layer 304includes oxide material or the like. In some embodiments, the dielectriclayer 304 may be formed by any suitable process, such as chemical vapordeposition (CVD), physical vapor deposition (PVD), atomic layerdeposition (ALD), or the like.

In some embodiments, as shown in FIGS. 7 and 8 and according to theoperation 410, a mask layer 306 is formed. In some embodiments, thedielectric layer 304 is covered by the mask layer 306. In someembodiments, the mask layer 306 has an aperture 307 corresponding to thedummy gate 302. In some embodiments, the mask layer 306 may be a hardmask. In some embodiments, the mask layer 306 may be formed by anysuitable process, such as chemical vapor deposition (CVD), physicalvapor deposition (PVD), atomic layer deposition (ALD), or the like.

As shown in FIG. 9, in some embodiments, according to the operation 412,the dummy gate 402 and the blocking cap 115 are removed. In someembodiments, the two blocking dams 116 and a portion of the first topportion 108 are exposed. In some embodiments, such removal may be doneby using any suitable etching process, polishing process, or the like.

FIGS. 10 and 11 are partial enlarged views of FIG. 9. As shown in FIGS.10 and 11, in some embodiments, according to the operation 414, theblocking dam 116 is trimmed so that a width of the blocking dam 116 isreduced from the first dam width 117 to a second dam width 118, whereinthe second dam width 118 is smaller than the first dam width 117. Insome embodiments, a portion of the first top portion 108 between the twoblocking dams 116 is defined as the first channel region 102. In someembodiments, the first channel region 102 has a first channel length 103measured along the y-axis direction. In some embodiments, the blockingdam 116 may be trimmed through an etching process.

In some embodiments, as shown in FIG. 12, the first channel region 102has a first top width 111 measured along the x-axis direction before thetrimming of the first channel region 102. In some embodiments, as shownin FIGS. 12 and 13, the first channel region 102 is trimmed so that awidth of the first channel region 102 is reduced from the first topwidth 111 to a first channel width 104 smaller than the first top width111. In some embodiments, the first channel region 102 may be trimmedthrough an etching process.

In conclusion, with the configuration of the FinFET structure, thechannel lengths of the fins can be different, so that the different finscan have a different current along the channel region.

One aspect of the present disclosure provides a FinFET structure. TheFinFET structure includes a first fin over a first base, the first finhaving a first channel region, wherein the first channel region has afirst channel length; and a second fin over a second base, the secondfin having a second channel region, wherein the second channel regionhas a second channel length, and the second channel length is differentfrom the first channel length.

Another aspect of the present disclosure provides a method ofmanufacturing a FinFET structure. The method includes forming a firstfin over a semiconductor substrate, wherein the first fin includes afirst bottom portion embedded in a first isolation layer over thesemiconductor substrate and a first top portion over the first bottomportion; forming a blocking layer, wherein the blocking layer includestwo blocking dams on the first top portion, wherein at least one of theblocking dams has a first dam width measured along a y-axis direction;trimming the blocking dam from the first dam width to a second dam widthsmaller than the first dam width, wherein a portion of the first topportion between the two blocking dams is defined as a first channelregion, and the first channel region has a first channel length measuredalong the y-axis direction.

Although the present disclosure and its advantages have been describedin detail, it should be understood that various changes, substitutionsand alterations can be made herein without departing from the spirit andscope of the disclosure as defined by the appended claims. For example,many of the processes discussed above can be implemented in differentmethodologies and replaced by other processes, or a combination thereof.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the present disclosure, processes, machines,manufacture, compositions of matter, means, methods, or steps, presentlyexisting or later to be developed, that perform substantially the samefunction or achieve substantially the same result as the correspondingembodiments described herein may be utilized according to the presentdisclosure. Accordingly, the appended claims are intended to includewithin their scope such processes, machines, manufacture, compositionsof matter, means, methods, and steps.

What is claimed is:
 1. A method of manufacturing a FinFET structure,comprising: forming a first fin over a semiconductor substrate andextending along a second direction, wherein the first fin includes afirst bottom portion embedded in a first isolation layer over thesemiconductor substrate and a first top portion over the first bottomportion; forming a blocking layer, wherein the blocking layer includestwo blocking dams disposed on the first top portion, wherein the twoblocking dams are spaced apart from each other and arranged along thesecond direction, wherein at least one of the blocking dams has a firstdam width measured along the second direction; trimming the blocking damalong the second direction so that a width of the block dam is reducedfrom the first dam width to a second dam width smaller than the firstdam width, wherein a portion of the first top portion between the twoblocking dams is defined as a first channel region, and the firstchannel region has a first channel length measured along the seconddirection.
 2. The method of claim 1, further comprising: forming a dummygate covering a portion of the first top portion before forming ablocking layer, wherein the dummy gate is between the two blocking damsafter the forming of the blocking layer; and removing the dummy gate,wherein the two blocking dams and the portion of the first top portionare exposed.
 3. The method of claim 2, wherein the blocking layerfurther includes a blocking cap on a top of the dummy gate, wherein theblocking cap is removed during the removing of the dummy gate.
 4. Themethod of claim 3, further comprising: forming a dielectric layercovering the first fin and the first isolation layer before removing theblocking cap and the dummy gate.
 5. The method of claim 4, furthercomprising: forming a mask layer covering the dielectric layer, whereinthe mask layer has an aperture corresponding to the dummy gate, beforeremoving the blocking cap and the dummy gate.
 6. The method of claim 1,wherein the first channel region has a first top width measured along athird direction perpendicular to the second direction before thetrimming of the first channel region.
 7. The method of claim 6, whereinthe first fin extends vertically from the semiconductor substrate in afirst direction perpendicular to the third direction and the seconddirection.
 8. The method of claim 6, further comprising: trimming thefirst channel region so that a width of the first channel region isreduced from the first top width to a first channel width smaller thanthe first top width.
 9. The method of claim 8, further comprising:forming a first drain region and a first source region adjacent to thefirst channel region, wherein the first drain region, the first channelregion and the first source region are arranged along the seconddirection, and each of the first drain region and the first sourceregion of the first fin has the first top width measured along the thirddirection, wherein the first top width is larger than the first channelwidth.